• Current injection 1.54 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells 

      Al Tahtamouni, T. M.; Li, J.; Lin, J. Y.; Jiang, H. X. ( OSA - The Optical Society , 2016 , Article)
      We report on the growth, fabrication and electroluminescence (EL) characteristics of light-emitting diodes (LEDs) based on Er-doped GaN (GaN:Er) and GaN/AlGaN multiple quantum well (MQW:Er) active layers. The LED structures ...
    • Hybrid electro-optic plasmonic modulators based on directional coupler switches 

      Zografopoulos, Dimitrios C.; Swillam, Mohamed A.; Shahada, Lamees A.; Beccherelli, Romeo ( Springer Verlag , 2016 , Article)
      By breaking the diffraction limit, plasmonics enable the miniaturization of integrated optical signal processing units in a platform compatible with traditional CMOS technology. In such architectures, modulators and switches ...
    • On Chip Optical Modulator using Epsilon-Near-Zero Hybrid Plasmonic Platform 

      Swillam M.A.; Zaki A.O.; Kirah K.; Shahada L.A. ( Nature Publishing Group , 2019 , Article)
      In this work, we propose a micro-scale modulator architecture with compact size, low insertion loss, high extinction ratio, and low energy/bit while being compatible with the silicon-on-insulator (SOI) platform. This is ...
    • Optical modulator based on silicon nanowires racetrack resonator 

      Sherif S.M.; Shahada L.; Swillam M. ( SPIE , 2018 , Conference Paper)
      An optical modulator based on the racetrack resonator configuration is introduced.The structure of the resonator modulator is built from silicon nanowires on silica.The cladding and voids between the silicon nanowires are ...