Search
Now showing items 31-34 of 34
Activation and stabilization of gallium arsenide anode in an aqueous photoelectrochemical cell
(
Elsevier
, 2003 , Article)
The formation of a porous layer on the surface of gallium arsenide anode, n-GaAs, increases photogenerated currents significantly. This layer was formed as a result of an anodic polarization of illuminated n-GaAs in acidified ...
The role of type II FB (I):Tl+ defect in laser light generation and color image formation at the low coordination surface sites of AgBr: Ab initio calculations
(
Elsevier
, 2006 , Article)
The role of type II FB (I):Tl+ color center at low coordination surface sites of AgBr thin films in providing tunable laser activity and photographic sensitization is examined. The double-well potential at this site is ...
Spectroscopic studies on the charge-transfer complex [VO(acac) 2]I5 formed in the reaction of oxovanadium(IV) acetylacetonate with iodine
(2005 , Article)
Spectroscopic Studies on the Charge-Transfer Complex [VO(acac)2]I5 Formed in the Reaction of Oxovanadium(IV)acetylacetonate with Iodine
Prevention of gallium arsenide photocorrosion by an epoxy adhesion layer
(
Elsevier Ltd
, 2004 , Article)
Coating of gallium arsenide with an adhesion layer of commercial epoxy prevented its photocorrosion. A two-component room temperature curing adhesive paste (Araldite 2014) has been selected. When GaAs/Araldite was employed ...