تصفح حسب الموضوع "bottom-gate ZnO"
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Study of device instability of bottom-gate ZnO transistors with sol-gel derived channel layers
( American Institute of Physics Inc. , 2017 , Article)In this paper, the authors report the device instability of solution based ZnO thin film transistors by studying the time-evolution of electrical characteristics during electrical stressing and subsequent relaxation. A ...