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Study of device instability of bottom-gate ZnO transistors with sol-gel derived channel layers
(
American Institute of Physics Inc.
, 2017 , Article)
In this paper, the authors report the device instability of solution based ZnO thin film transistors by studying the time-evolution of electrical characteristics during electrical stressing and subsequent relaxation. A ...
Time-resolved photocurrent spectroscopic diagnostics of electrically active defects in AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on Si wafers
(
American Scientific Publishers
, 2016 , Article)
Time-resolved photocurrent (TRPC) spectroscopy with a variable-wavelength sub-bandgap light excitation was used to study the dynamics of the decaying photocurrent generated in the heterostructures of the AlGaN/GaN high ...