• Self-implantation of Cz-Si: Clustering and annealing of defects 

      Abdulmalik, D. A.; Coleman, P. G.; Al-Qaradawi, I. Y. ( Elsevier , 2006 , Article)
      Observations of vacancy clusters formed in Czochralski (Cz) Si after high energy ion implantation are reported. Vacancy clusters were created by 2 MeV Si ion implantation of 1 × 10 15 ions/cm 2 and after annealing between ...