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Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate
(
Institute of Physics Publishing
, 2017 , Article)
The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the ...
Influence of TMAl preflow on AlN epitaxy on sapphire
(
American Institute of Physics Inc.
, 2017 , Article)
The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow ...
Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures
(
Japan Society of Applied Physics
, 2018 , Article)
We reveal the microstructure and dislocation behavior in 20-pair B0.14Al0.86N/Al0.70Ga0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the ...