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AuthorDumont, Lucile
AuthorCardin, Julien
AuthorLabbe, Christophe Labbe
AuthorFrilay , Cedric
AuthorAnglade, Pierre-Matthieu
AuthorYu, Ing-Song
AuthorVallet, Maxime
AuthorBenzo, Patrick
AuthorCarrada, Marzia
AuthorStievenard, Didier
AuthorMerabet, Hocine
AuthorGourbilleau, Fabrice
Available date2020-05-15T00:15:02Z
Publication Date2019
Publication NameProgress in Photovoltaics: Research and Applications
ISSN10627995
URIhttp://dx.doi.org/10.1002/pip.3071
URIhttp://hdl.handle.net/10576/14899
AbstractDown converter SiNx:Yb3+/SiNx:Tb3+ multilayers are deposited by reactive magnetron cosputtering with the objective of optimizing the interaction distance between Tb3+ and Yb3+ ions to favor a better light management in Si solar cells. Those Si-based multilayers are developed to be compatible with the Si photovoltaic technology. The deposition parameters are optimized to enhance the emission of the Yb3+ ions in the IR region. The emission efficiency of such multilayer structure is compared with a mixed RE SiNx:Tb3+-Yb3+ layer evidencing a gain resulting from a better management of the Tb3+ and Yb3+ ions distance. At the end, we integrate the growth of such a multilayer in an industrial Si solar cell process and demonstrate the existence of a frequency conversion effect that is promising for the future increase of the Si solar cell efficiency.
SponsorAgence Nationale de la Recherche, Grant/ Award Number: ANR-13-BS09-0020-01; Qatar National Research Fund, Grant/Award Numbers: 8?1467?1?268 and 8?1467?1?268
Languageen
PublisherJohn Wiley and Sons Ltd
Subjectdown converter
Subjectrare earth ions
SubjectSi solar cell efficiency
SubjectSiNx
SubjectTb-Yb
TitleFirst down converter multilayers integration in an industrial Si solar cell process
TypeArticle
Pagination152-162
Issue Number2
Volume Number27


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